1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMG8601UFG

DMG8601UFG

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMG8601UFG Image

The DMG8601UFG from Diodes Incorporated is a MOSFET with Continous Drain Current 6.1 A, Drain Source Resistance 17 to 34 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.05 V. Tags: Surface Mount. More details for DMG8601UFG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMG8601UFG
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, 6.1 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6.1 A
  • Drain Source Resistance
    17 to 34 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1.05 V
  • Gate Charge
    8.8 nC
  • Power Dissipation
    0.92 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN3030-8

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products