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DMG8822UTS

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The DMG8822UTS from Diodes Incorporated is a MOSFET with Continous Drain Current 4.9 A, Drain Source Resistance 19 to 37 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Surface Mount. More details for DMG8822UTS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG8822UTS
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, 4.9 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.9 A
  • Drain Source Resistance
    19 to 37 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 0.9 V
  • Gate Charge
    9.6 nC
  • Power Dissipation
    0.87 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8

Technical Documents
View details on the manufacturer's website
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