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DMG8880LK3

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DMG8880LK3 Image

The DMG8880LK3 from Diodes Incorporated is a MOSFET with Continous Drain Current 16.5 A, Drain Source Resistance 5 to 12 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.3 V. Tags: Surface Mount. More details for DMG8880LK3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMG8880LK3
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16.5 A
  • Drain Source Resistance
    5 to 12 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.3 V
  • Gate Charge
    27.6 nC
  • Power Dissipation
    1.68 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)

Technical Documents
View details on the manufacturer's website
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