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DMHC10H170SFJ

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DMHC10H170SFJ Image

The DMHC10H170SFJ from Diodes Incorporated is a MOSFET with Continous Drain Current 2.3 to 2.9 A, Drain Source Resistance 111 to 300 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMHC10H170SFJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMHC10H170SFJ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, Dual, N/P Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.3 to 2.9 A
  • Drain Source Resistance
    111 to 300 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    4.9 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    V-DFN5045-12
  • Applications
    High-Efficiency Bridge Rectifiers

Technical Documents
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