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DMJ65H650SCTI

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DMJ65H650SCTI Image

The DMJ65H650SCTI from Diodes Incorporated is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 500 to 600 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for DMJ65H650SCTI can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMJ65H650SCTI
  • Manufacturer
    Diodes Incorporated
  • Description
    650 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    500 to 600 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    12.9 nC
  • Power Dissipation
    31 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO220AB
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
View details on the manufacturer's website
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