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DMJ70H1D4SJ3

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The DMJ70H1D4SJ3 from Diodes Incorporated is a MOSFET with Continous Drain Current 6.1 A, Drain Source Resistance 1260 to 1400 milliohm, Drain Source Breakdown Voltage 700 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 5 V. Tags: Through Hole. More details for DMJ70H1D4SJ3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMJ70H1D4SJ3
  • Manufacturer
    Diodes Incorporated
  • Description
    700 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.1 A
  • Drain Source Resistance
    1260 to 1400 milliohm
  • Drain Source Breakdown Voltage
    700 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 5 V
  • Gate Charge
    9 nC
  • Power Dissipation
    78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO251
  • Applications
    Adaptor, LCD & PDP TV, Lighting

Technical Documents
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