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DMN1008UFDFQ

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The DMN1008UFDFQ from Diodes Incorporated is a MOSFET with Continous Drain Current 12.2 A, Drain Source Resistance 6.6 to 12.5 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.3 to 1 V. Tags: Surface Mount. More details for DMN1008UFDFQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN1008UFDFQ
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, 12.2 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12.2 A
  • Drain Source Resistance
    6.6 to 12.5 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.3 to 1 V
  • Gate Charge
    8 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Battery Management Application, Power Management Functions, DC-DC Converters

Technical Documents
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