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DMN1054UCB4

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The DMN1054UCB4 from Diodes Incorporated is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 35 to 110 milliohm, Drain Source Breakdown Voltage 8 V, Gate Source Voltage -5 to 5 V, Gate Source Threshold Voltage 0.35 to 0.7 V. Tags: Surface Mount. More details for DMN1054UCB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN1054UCB4
  • Manufacturer
    Diodes Incorporated
  • Description
    8 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    35 to 110 milliohm
  • Drain Source Breakdown Voltage
    8 V
  • Gate Source Voltage
    -5 to 5 V
  • Gate Source Threshold Voltage
    0.35 to 0.7 V
  • Gate Charge
    9.6 nC
  • Power Dissipation
    1.34 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X1-WLB0808-4
  • Applications
    DC-DC Converters, Battery Management, Load Switch

Technical Documents
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