The DMN1150UFB from Diodes Incorporated is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 210 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for DMN1150UFB can be seen below.