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DMN1150UFB

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The DMN1150UFB from Diodes Incorporated is a MOSFET with Continous Drain Current 1.4 A, Drain Source Resistance 210 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for DMN1150UFB can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN1150UFB
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.4 A
  • Drain Source Resistance
    210 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    1.5 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X1-DFN1006-3
  • Applications
    DC-DC Converters, Power management functions

Technical Documents
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