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DMN1250UFEL

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The DMN1250UFEL from Diodes Incorporated is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 280 to 550 milliohm, Drain Source Breakdown Voltage 12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for DMN1250UFEL can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN1250UFEL
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Triple
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    280 to 550 milliohm
  • Drain Source Breakdown Voltage
    12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1.3 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-QFN1515-12

Technical Documents
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