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DMN2005LP4K

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The DMN2005LP4K from Diodes Incorporated is a MOSFET with Continous Drain Current 0.3 A, Drain Source Resistance 350 to 3500 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.53 to 0.9 V. Tags: Surface Mount. More details for DMN2005LP4K can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2005LP4K
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.3 A
  • Drain Source Resistance
    350 to 3500 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.53 to 0.9 V
  • Power Dissipation
    0.4 W
  • Temperature operating range
    -65 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN1006-3

Technical Documents
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