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DMN2013UFX

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The DMN2013UFX from Diodes Incorporated is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 8.4 to 14 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1.1 V. Tags: Surface Mount. More details for DMN2013UFX can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2013UFX
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    8.4 to 14 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1.1 V
  • Gate Charge
    32.4 nC
  • Power Dissipation
    2.14 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    W-DFN5020-6
  • Applications
    General Purpose Interfacing Switch, Power Management Functions

Technical Documents
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