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DMN2016UTS

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The DMN2016UTS from Diodes Incorporated is a MOSFET with Continous Drain Current 8.58 A, Drain Source Resistance 11 to 16.5 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for DMN2016UTS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2016UTS
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    8.58 A
  • Drain Source Resistance
    11 to 16.5 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    16.5 nC
  • Power Dissipation
    0.88 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8

Technical Documents
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