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DMN2023UCB4

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DMN2023UCB4 Image

The DMN2023UCB4 from Diodes Incorporated is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 17 to 40 milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.3 V. Tags: Surface Mount. More details for DMN2023UCB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2023UCB4
  • Manufacturer
    Diodes Incorporated
  • Description
    24 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    17 to 40 milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.3 V
  • Gate Charge
    29 nC
  • Power Dissipation
    1.45 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X1-WLB1818-4
  • Applications
    Battery Management, Load Switch, Battery Protection

Technical Documents
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