The DMN2025UFDB from Diodes Incorporated is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 18.5 to 31 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for DMN2025UFDB can be seen below.