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DMN2026UVT

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The DMN2026UVT from Diodes Incorporated is a MOSFET with Continous Drain Current 6.2 A, Drain Source Resistance 18 to 32 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1.5 V. Tags: Surface Mount. More details for DMN2026UVT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2026UVT
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.2 A
  • Drain Source Resistance
    18 to 32 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1.5 V
  • Gate Charge
    10 nC
  • Power Dissipation
    1.75 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT26
  • Applications
    DC-DC Converters, Power Management Functions, Backlighting

Technical Documents
View details on the manufacturer's website
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