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DMN2029USD

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The DMN2029USD from Diodes Incorporated is a MOSFET with Continous Drain Current 5.8 A, Drain Source Resistance 14 to 35 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for DMN2029USD can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2029USD
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.8 A
  • Drain Source Resistance
    14 to 35 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    10.4 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    DC-DC Converters, Power Management Functions, Backlighting

Technical Documents
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