DMN2041UVT

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DMN2041UVT Image

The DMN2041UVT from Diodes Incorporated is a MOSFET with Continous Drain Current 5.8 A, Drain Source Resistance 17 to 40 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for DMN2041UVT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2041UVT
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.8 A
  • Drain Source Resistance
    17 to 40 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Gate Charge
    9.1 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT26
  • Applications
    Backlighting, DC-DC Converters, Power Management Functions

Technical Documents

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