DMN2053UW

Note : Your request will be directed to Diodes Incorporated.

DMN2053UW Image

The DMN2053UW from Diodes Incorporated is a MOSFET with Continous Drain Current 2.9 A, Drain Source Resistance 39 to 140 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for DMN2053UW can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN2053UW
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.9 A
  • Drain Source Resistance
    39 to 140 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, DC-DC Converters, Analog Switch

Technical Documents

Latest MOSFETs

View more products