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DMN2055UWQ

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The DMN2055UWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 3.1 A, Drain Source Resistance 35 to 53 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for DMN2055UWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2055UWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.1 A
  • Drain Source Resistance
    35 to 53 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    4.3 nC
  • Power Dissipation
    0.65 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, DC-DC Converters, Analog Switch

Technical Documents
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