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DMN2058UW

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The DMN2058UW from Diodes Incorporated is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 31.5 to 91 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1.2 V. Tags: Surface Mount. More details for DMN2058UW can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2058UW
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    31.5 to 91 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1.2 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    Motor Control, Power Management Functions, Backlighting

Technical Documents
View details on the manufacturer's website
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