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DMN2080UCB4

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The DMN2080UCB4 from Diodes Incorporated is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 43 to 115 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for DMN2080UCB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2080UCB4
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    43 to 115 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    7.4 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-WLB0808-4
  • Applications
    DC-DC Converters, Battery Management, Load Switch

Technical Documents
View details on the manufacturer's website
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