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DMN22M5UFG

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DMN22M5UFG Image

The DMN22M5UFG from Diodes Incorporated is a MOSFET with Continous Drain Current 99 nC, Drain Source Resistance 1.5 to 3.5 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.3 V. Tags: Surface Mount. More details for DMN22M5UFG can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN22M5UFG
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    99 nC
  • Drain Source Resistance
    1.5 to 3.5 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.3 V
  • Gate Charge
    53 nC
  • Power Dissipation
    2.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerDI3333-8
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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