The DMN2450UFB4Q from Diodes Incorporated is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 300 to 700 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 0.9 V. Tags: Surface Mount. More details for DMN2450UFB4Q can be seen below.
