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DMN2501UFB4

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DMN2501UFB4 Image

The DMN2501UFB4 from Diodes Incorporated is a MOSFET with Continous Drain Current 1.5 A, Drain Source Resistance 170 to 700 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for DMN2501UFB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN2501UFB4
  • Manufacturer
    Diodes Incorporated
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.5 A
  • Drain Source Resistance
    170 to 700 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    1.1 nC
  • Power Dissipation
    1.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN1006-3
  • Applications
    DC-DC Converters, Power Management Functions

Technical Documents
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