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DMN3009SK3

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The DMN3009SK3 from Diodes Incorporated is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 2.5 to 9 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMN3009SK3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3009SK3
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    2.5 to 9 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    42 nC
  • Power Dissipation
    3.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Power Management Functions, DC-DC Converters, Industries

Technical Documents
View details on the manufacturer's website
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