1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMN3026LVT

DMN3026LVT

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMN3026LVT Image

The DMN3026LVT from Diodes Incorporated is a MOSFET with Continous Drain Current 6.6 A, Drain Source Resistance 19 to 30 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for DMN3026LVT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN3026LVT
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.6 A
  • Drain Source Resistance
    19 to 30 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    12.5 nC
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT26
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products