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DMN3060LWQ

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The DMN3060LWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 2.6 A, Drain Source Resistance 48 to 100 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.7 to 1.8 V. Tags: Surface Mount. More details for DMN3060LWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3060LWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.6 A
  • Drain Source Resistance
    48 to 100 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.7 to 1.8 V
  • Gate Charge
    5.6 nC
  • Power Dissipation
    0.64 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT323
  • Applications
    General Purpose Interfacing Switch, Power Management Functions, DC-DC Converters, Analog Switch

Technical Documents
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