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DMN30H4D0LFDE

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DMN30H4D0LFDE Image

The DMN30H4D0LFDE from Diodes Incorporated is a MOSFET with Continous Drain Current 0.55 A, Drain Source Resistance 2300 to 6000 Milliohm, Drain Source Breakdown Voltage 300 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.8 V. Tags: Surface Mount. More details for DMN30H4D0LFDE can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN30H4D0LFDE
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 7.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.55 A
  • Drain Source Resistance
    2300 to 6000 Milliohm
  • Drain Source Breakdown Voltage
    300 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.8 V
  • Gate Charge
    7.6 nC
  • Power Dissipation
    1.98 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Power management functions, Battery Operated Systems and Solid-State Relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Technical Documents
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