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DMN3190LDWQ

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The DMN3190LDWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 122 to 335 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.8 V. Tags: Surface Mount. More details for DMN3190LDWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3190LDWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    122 to 335 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.8 V
  • Gate Charge
    2 nC
  • Power Dissipation
    0.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    Motor Control, DC-DC Converters, Load Switch

Technical Documents
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