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DMN3270UVT

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The DMN3270UVT from Diodes Incorporated is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 114 to 3000 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -0.5 to 5 V, Gate Source Threshold Voltage 0.35 to 0.9 V. Tags: Surface Mount. More details for DMN3270UVT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN3270UVT
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.6 A
  • Drain Source Resistance
    114 to 3000 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -0.5 to 5 V
  • Gate Source Threshold Voltage
    0.35 to 0.9 V
  • Gate Charge
    3.07 nC
  • Power Dissipation
    1.08 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT26
  • Applications
    Battery Management System, Electric Vehicle

Technical Documents
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