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DMN32D2LFB4

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The DMN32D2LFB4 from Diodes Incorporated is a MOSFET with Continous Drain Current 0.42 A, Drain Source Resistance 1200 to 2200 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.6 to 1.2 V. Tags: Surface Mount. More details for DMN32D2LFB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN32D2LFB4
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.42 A
  • Drain Source Resistance
    1200 to 2200 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.6 to 1.2 V
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X2-DFN1006-3
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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