DMN4020LFDEQ

Note : Your request will be directed to Diodes Incorporated.

DMN4020LFDEQ Image

The DMN4020LFDEQ from Diodes Incorporated is a MOSFET with Continous Drain Current 8.6 A, Drain Source Resistance 15 to 28 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.4 to 2.4 V. Tags: Surface Mount. More details for DMN4020LFDEQ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN4020LFDEQ
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8.6 A
  • Drain Source Resistance
    15 to 28 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.4 to 2.4 V
  • Gate Charge
    12.7 to 25.3 nC
  • Power Dissipation
    2.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    General Purpose Interfacing Switch, Power Management Functions

Technical Documents

Latest MOSFETs

View more products