DMN4030LK3Q

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DMN4030LK3Q Image

The DMN4030LK3Q from Diodes Incorporated is a MOSFET with Continous Drain Current 9.6 A, Drain Source Resistance 21 to 50 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMN4030LK3Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN4030LK3Q
  • Manufacturer
    Diodes Incorporated
  • Description
    40 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.6 A
  • Drain Source Resistance
    21 to 50 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    6.5 to 12.9 nC
  • Power Dissipation
    4.18 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Backlighting, DC-DC Converters, Power Management Functions

Technical Documents

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