1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMN53D0LDW

DMN53D0LDW

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMN53D0LDW Image

The DMN53D0LDW from Diodes Incorporated is a MOSFET with Continous Drain Current 0.36 A, Drain Source Resistance 1000 to 4500 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for DMN53D0LDW can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN53D0LDW
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.36 A
  • Drain Source Resistance
    1000 to 4500 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    0.6 nC
  • Power Dissipation
    0.31 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    DC-DC Converters, Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products