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DMN53D0LDWQ

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The DMN53D0LDWQ from Diodes Incorporated is a MOSFET with Continous Drain Current 0.46 A, Drain Source Resistance 1000 to 4500 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for DMN53D0LDWQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN53D0LDWQ
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.46 A
  • Drain Source Resistance
    1000 to 4500 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    0.7 to 1.4 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    Backlighting, DC-DC Converters, Power Management Functions, Moter control

Technical Documents
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