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DMN55D0UT

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The DMN55D0UT from Diodes Incorporated is a MOSFET with Continous Drain Current 0.16 A, Drain Source Resistance 3100 to 5000 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.7 to 1 V. Tags: Surface Mount. More details for DMN55D0UT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN55D0UT
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.16 A
  • Drain Source Resistance
    3100 to 5000 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.7 to 1 V
  • Gate Charge
    0.295 to 0.636 nC
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT523
  • Applications
    Motor Driving, Power Management Functions, Load Switching

Technical Documents
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