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DMN5L06VKQ

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DMN5L06VKQ Image

The DMN5L06VKQ from Diodes Incorporated is a MOSFET with Continous Drain Current 0.28 A, Drain Source Resistance 1160 to 3000 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.49 to 1.2 V. Tags: Surface Mount. More details for DMN5L06VKQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN5L06VKQ
  • Manufacturer
    Diodes Incorporated
  • Description
    50 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.28 A
  • Drain Source Resistance
    1160 to 3000 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.49 to 1.2 V
  • Power Dissipation
    0.25 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT563
  • Applications
    General Purpose Interfacing Switch

Technical Documents
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