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DMN6010SCTBQ

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DMN6010SCTBQ Image

The DMN6010SCTBQ from Diodes Incorporated is a MOSFET with Continous Drain Current 128 A, Drain Source Resistance 7.7 to 10 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMN6010SCTBQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN6010SCTBQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    128 A
  • Drain Source Resistance
    7.7 to 10 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    46 nC
  • Power Dissipation
    312 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO263AB (D2PAK)
  • Applications
    Motor Controls, Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents
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