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DMN601VKQ

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The DMN601VKQ from Diodes Incorporated is a MOSFET with Continous Drain Current 0.305 A, Drain Source Resistance 2000 to 3000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMN601VKQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN601VKQ
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.305 A
  • Drain Source Resistance
    2000 to 3000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Power Dissipation
    0.25 W
  • Temperature operating range
    -65 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT563

Technical Documents
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