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DMN6022SSS

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The DMN6022SSS from Diodes Incorporated is a MOSFET with Continous Drain Current 6.9 A, Drain Source Resistance 18 to 34 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for DMN6022SSS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN6022SSS
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.9 A
  • Drain Source Resistance
    18 to 34 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    14 to 32 nC
  • Power Dissipation
    2.1 W
  • Temperature operating range
    -65 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    DC-DC Converters, Power Management Functions, Backlighting

Technical Documents
View details on the manufacturer's website
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