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DMN60H080DS

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The DMN60H080DS from Diodes Incorporated is a MOSFET with Continous Drain Current 0.08 A, Drain Source Resistance 67 to 290 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3 V. Tags: Surface Mount. More details for DMN60H080DS can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN60H080DS
  • Manufacturer
    Diodes Incorporated
  • Description
    600 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.08 A
  • Drain Source Resistance
    67 to 290 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3 V
  • Gate Charge
    1.7 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
View details on the manufacturer's website
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