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DMN62D4LFB

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DMN62D4LFB Image

The DMN62D4LFB from Diodes Incorporated is a MOSFET with Continous Drain Current 0.407 A, Drain Source Resistance 1330 to 3000 milliohm, Drain Source Breakdown Voltage 65 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMN62D4LFB can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN62D4LFB
  • Manufacturer
    Diodes Incorporated
  • Description
    65 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.407 A
  • Drain Source Resistance
    1330 to 3000 milliohm
  • Drain Source Breakdown Voltage
    65 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.6 to 1.1 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    X1-DFN1006-3
  • Applications
    DC-DC Converters, Power Management Functions, Battery Operated Systems and Solid-State Relays

Technical Documents
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