1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Diodes Incorporated
  6. DMN63D8LDW

DMN63D8LDW

Download Datasheet Request Quote

Note : Your request will be directed to Diodes Incorporated.

DMN63D8LDW Image

The DMN63D8LDW from Diodes Incorporated is a MOSFET with Continous Drain Current 0.26 A, Drain Source Resistance 2800 to 13000 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.8 to 1.5 V. Tags: Surface Mount. More details for DMN63D8LDW can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    DMN63D8LDW
  • Manufacturer
    Diodes Incorporated
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.26 A
  • Drain Source Resistance
    2800 to 13000 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.8 to 1.5 V
  • Gate Charge
    0.87 nC
  • Power Dissipation
    0.4 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT363
  • Applications
    DC-DC Converters, Power Management Functions, Battery Operated Systems and Solid-State Relays, Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products