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DMN65D9L

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The DMN65D9L from Diodes Incorporated is a MOSFET with Continous Drain Current 0.335 A, Drain Source Resistance 3200 to 4200 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -16 to 16 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for DMN65D9L can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN65D9L
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.335 A
  • Drain Source Resistance
    3200 to 4200 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -16 to 16 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.4 nC
  • Power Dissipation
    0.67 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT23
  • Applications
    Backlighting, Power Management Functions, DC-DC Converters

Technical Documents
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