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DMN80H2D0SCTI

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DMN80H2D0SCTI Image

The DMN80H2D0SCTI from Diodes Incorporated is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 1400 to 2000 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for DMN80H2D0SCTI can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMN80H2D0SCTI
  • Manufacturer
    Diodes Incorporated
  • Description
    800 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    1400 to 2000 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    35.4 nC
  • Power Dissipation
    41 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    ITO220AB
  • Applications
    Motor Control, Backlighting, DC-DC Converters, Power Management Functions

Technical Documents
View details on the manufacturer's website
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