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DMNH10H028SK3Q

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DMNH10H028SK3Q Image

The DMNH10H028SK3Q from Diodes Incorporated is a MOSFET with Continous Drain Current 55 A, Drain Source Resistance 20 to 28 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMNH10H028SK3Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMNH10H028SK3Q
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 36 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    55 A
  • Drain Source Resistance
    20 to 28 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    36 nC
  • Power Dissipation
    3.7 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Engine Management Systems, Body Control Electronics, DC-DC Converters

Technical Documents
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