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DMNH15H110SK3

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The DMNH15H110SK3 from Diodes Incorporated is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 70 to 110 Milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for DMNH15H110SK3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMNH15H110SK3
  • Manufacturer
    Diodes Incorporated
  • Description
    -20 to 20 V, 25.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    70 to 110 Milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    25.5 nC
  • Power Dissipation
    2 to 88 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q100, AEC-Q101, AEC-Q200
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252
  • Applications
    Power Management, Driving Solenoids, Motor Control

Technical Documents
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