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DMNH6011LK3Q

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DMNH6011LK3Q Image

The DMNH6011LK3Q from Diodes Incorporated is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 8.3 to 18 milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Surface Mount. More details for DMNH6011LK3Q can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMNH6011LK3Q
  • Manufacturer
    Diodes Incorporated
  • Description
    55 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    8.3 to 18 milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    23.4 to 49.1 nC
  • Power Dissipation
    3 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252 (DPAK)
  • Applications
    Engine Management Systems, Body Control Electronics, DC DC Converters

Technical Documents
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