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DMP1009UFDFQ

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The DMP1009UFDFQ from Diodes Incorporated is a MOSFET with Continous Drain Current -11 A, Drain Source Resistance 8.3 to 30 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for DMP1009UFDFQ can be seen below.

Product Specifications

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Product Details

  • Part Number
    DMP1009UFDFQ
  • Manufacturer
    Diodes Incorporated
  • Description
    12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11 A
  • Drain Source Resistance
    8.3 to 30 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    26 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 ºC
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    U-DFN2020-6
  • Applications
    Battery Management Application, Power Management Functions, DC-DC Conveters

Technical Documents
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